Y掺杂WS2二维材料的第一性原理研究

WS₂由于其优异的物理和光电性质引起了广泛关注。本研究基于第一性原理计算方法,探索了本征单层WS₂及不同浓度W原子替位钇(Y)掺杂WS₂的电子结构和光学特性。结果表明本征单层WS₂为带隙1.814 eV的直接带隙半导体。进行4%浓度(原子数分数)的Y原子掺杂后,带隙减小为1.508 eV,依旧保持着直接带隙的特性,随着Y掺杂浓度的不断增大,掺杂WS₂带隙进一步减小,当浓度达到25%时,能带结构转变为0.658 eV的间接带隙,WS₂表现出磁性。适量浓度的掺杂可以提高材料的导电性能,且掺杂浓度增大时,体系依旧保持着透明性并且在红外光和可见光区对光子的吸收能力、材料的介电性能都有着显著提高。本文为WS₂二维材料相关光电器件的研究提供了理论依据。     

金刚石衬底上GaN HEMT沟道温度建模:各向异性且非均匀热导率的影响

为了改善GaN HEMT的自热效应,集成高热导率的金刚石衬底有助于增强器件有源区的热量耗散。然而,化学气相淀积(CVD)生长的多晶金刚石(PCD)具有柱状晶粒结构,导致了各向异性的材料热导率,且其热导率值与生长厚度有关。为此,通过建模金刚石生长过程中晶粒尺寸的演变过程,计算了金刚石沿面内和截面方向的热导率。基于该PCD热导率模型,利用计入材料非线性热导率的GaN器件热阻解析模型,计算得到了GaN HEMT沟道温度的波动范围,并分析了其与器件结构(栅长、栅宽、栅间距、衬底厚度)和功耗的依赖关系。最后,通过与有限元(FEM)仿真结果对比,分区域提取了GaN HEMT器件中PCD衬底的有效热导率,分别为260~310 W/(m·K)和1 250~1 450 W/(m·K)。本文的计算为预测金刚石衬底上GaN HEMT器件的沟道温度提供了快速、有效的方法。     

Conformational change-modulated spin transport at single-molecule level in carbon systems

Controlling the spin transport at the single-molecule level, especially without the use of ferromagnetic contacts, becomes a focus of research in spintronics. Inspired by the progress on atomic-level molecular synthesis, through first-principles calculations, we investigate the spin-dependent electronic transport of graphene nanoflakes with side-bonded functional groups, contacted by atomic carbon chain electrodes. It is found that, by rotating the functional group, the spin polarization of the transmission at the Fermi level could be switched between completely polarized and unpolarized states. Moreover, the transition between spin-up and spin-down polarized states can also be achieved, operating as a dual-spin filter. Further analysis shows that, it is the spin-dependent shift of density of states, caused by the rotation, that triggers the shift of transmission peaks, and then results in the variation of spin polarization. Such a feature is found to be robust to the length of the nanoflake and the electrode material, showing great application potential. Those findings may throw light on the development of spintronic devices.     

Design of broadband achromatic metasurface device based on phase-change material Ge2Sb2Te5

Based on the phase-change material Ge₂Sb₂Te₅ (GST), achromatic metasurface optical device in the longer-infrared wavelength is designed. With the combination of the linear phase gradient GST nanopillar and the adjustment of the crystalline fraction m value of GST, the polarization insensitive achromic metalenses and beam deflector metasurface within the longer-infrared wavelength 9.5 μm to 13 μm are realized. The design results show that the achromatic metalenses can be focused on the same focal plane within the working waveband. The simulation calculation results show that the full-width at half-maximum (FWHM) of the focusing spot reaches the diffraction limit at each wavelength. In addition, the same method is also used to design a broadband achromatic beam deflector metasurface with the same deflection angle of 19°. The method proposed in this article not only provides new ideas for the design of achromatic metasurfaces, but also provides new possibilities for the integration of optical imaging, optical coding and other related optical systems.     

A general stability result for the semilinear viscoelastic wave model under localized effects

Our main goal in the present work is to address an integro-differential model under localized viscoelastic and frictional effects arising in the Boltzmann theory of viscoelasticity. More precisely, we consider a general version in the history context of the pioneer localized viscoelastic problem approached by Cavalcanti and Oquendo (2003) in the null history scenario, and more recently by Cavalcanti et al. (2018) in the history framework. By means of a new observability inequality, we prove a general stability result to the model under a weaker assumption on the localized frictional damping and a slower condition on the decreasing memory kernel (of polynomial type) than the previously mentioned works. To achieve such stability results, we still work in a general setting by removing the assumption on complementary damping mechanisms and show, in some reasonable situations concerning the density coefficient, that the localized viscoelastic effect is enough to ensure the general stability (of polynomial type) to the problem.     

Using a Novel and Easy-to-Use Sandwich Structure Device to Evaluate the Cooling Properties of Cool Materials

A number of cool materials have been designed and used in hot weather to minimize the heat coming from sunlight. Traditionally, solar reflectance and infrared emittance were measured to characterize the cooling properties of cool materials. However, these methods could represent the cooling property only indirectly. In this work, a sandwich structure device that can straightforwardly measure the cooling properties of cool materials was designed. Two cool materials, including high-density polyethylene (HDPE) and polyvinyl chloride (PVC), were selected to verify the device. For the purpose of comparison, UV-vis-NIR spectral characterization was also used to evaluate the cooling properties of the selected materials. The results, especially for the HDPE/Green 260 composite sample, which presents much lower solar reflectance but better cooling property, indicated that the cooling properties cannot be entirely represented by only the reflectance or transmittance, and the sandwich structure device was able to make up for this deficiency.     

Uniform stability of semilinear wave equations with arbitrary local memory effects versus frictional dampings

This paper is concerned with the mixed initial–boundary value problem for semilinear wave equations with complementary frictional dampings and memory effects. We successfully establish uniform exponential and polynomial decay rates for the solutions to this initial–boundary value problem under much weak conditions concerning memory effects. More specifically, we obtain the exponential and polynomial decay rates after removing the fundamental condition that the memory-effect region includes a part of the system boundary, while the condition is a necessity in the previous literature; moreover, for the polynomial decay rates we only assume minimal conditions on the memory kernel function g, without the usual assumption of $g^{\prime }$ controlled by g.